Part Number Hot Search : 
5N120BND NE612AN 030M3L N5844 T2A05 SB2060CT SPM3205 HD6433
Product Description
Full Text Search
 

To Download 2SD215309 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 High gain amplifier transistor (25V, 2A)
2SD2153
Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. Dimensions (Unit : mm)
4.0 1.0 2.5 0.5
1.5 0.4
(1)
1.6
3.0
0.5
(3)
4.5
(2)
(1) Base (2) Collector (3) Emitter
1.5 0.4
ROHM : MPT3 EIAJ : SC-62
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
+ +
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 30 25 6 2 3 0.5 2 150 -55 to +150
2
Unit V V V A(DC) A(Pulse) W C C
1
1 Single pulse, Pw=10ms 2 Mounted on a 40 40 t0.7mm Ceramic substrate
Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
Denotes hFE
2SD2153 MPT3 UVW DN T100 1000
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Measured using pulse current.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. 30 25 6 - - - 820 - -
Typ. - - - - - 0.12 - 110 22
Max. - - - 0.5 0.5 0.5 1800 - -
Unit V V V A A V - MHz pF
Conditions IC = 50A IC = 1mA IE = 50A VCB = 20V VEB = 5V IC/IB = 1A/20mA VCE/IC = 6V/0.5A VCE = 10V , IE = -10mA , f= 100MHz VCB = 10V , IE = 0A , f = 1MHz
0.4
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1.5
1/2
2009.12 - Rev.B
2SD2153
Electrical characteristics curves
2
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
10mA 9mA 8mA 7mA 6mA 5mA
Data Sheet
10 5 2 1 500m 200m 100m 50m 20m 10m 5m 2m 1m
This data are made from repesentative value of specific lot. The data do not indicate the worst value or guaranteed value. And we can not guarantee the value based on the data.
10k 5k
VCE=6V
Ta=100 C 25 C -40 C
3mA
DC CURRENT GAIN : hFE
4mA
2mA
Ta=100 C 25 C -25 C
2k 1k 500 200 100 50
1
1B=1mA
0
0
1
2
0
500m
1
1.5
1m
10m
100m
1
10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation characteristics
Fig.3 DC current gain
1 500m
1 500m
IC/IB=10
TRANSITION FREQUENCY : fT(MHz)
10000 500 200 100 50 20 10 5 2 1 1 2 5
VCE=6V Ta=25 C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
200m 100m 50m 20m 10m 5m 2m 1m 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 2 5
IC/IB=50 40 30 10
200m 100m 50m 20m 10m 5m 2m 1m 1m 2m
This data are made from repesentative value of specific lot. The data do not indicate the worst value or guaranteed value. And we can not guarantee the value based on the data.
Ta=100 C 25 C -25 C
This data are made from repesentative value of specific lot. The data do not indicate the worst value or guaranteed value. And we can not guarantee the value based on the data.
5m 10m 20m 50m 100m 200m 500m 1
2
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage vs. collector current
Fig.5 Collector-emitter saturation voltage vs. collector current
Fig.6 Gain bandwith product vs. emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR CURRENT : Ic (A)
Ta=25C f=1MHz Ic=0A
Ta=25C f=1MHz Ic=0A
10
Ic max (Pulse)
1
PW=100ms
PW=10ms
1000 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 100
1000 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10
DC
0.1
0.01
Ta=25C Single non repetitive pulse
0.001 0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Collector output capacitance vs. collector-base voltage
Fig.8 Emitter input capacitance vs. emitter-base voltage
Fig.9 Safe operating area
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.12 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved.
R0039A


▲Up To Search▲   

 
Price & Availability of 2SD215309

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X